Abstract
This document presents an integrated detection method for the whole cycle of silicon wafer processing based on Scanning Acoustic Microscope (SAM). It can be used for thickness and chamfering measurement, surface and subsurface testing, internal defects detection and identification. A SAM system was designed for silicon processing and silicon-based devices fabrication. It has more favorable measuring accuracy and quantitative analysis ability than the traditional inspection equipments using for wafer process such as infrared detector.
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