The absorptance in multilayer MoS2 and WS2-dielectric structures

Abstract

Using the transfer matrix method, the absorption properties of multilayer dielectric structures composed of the molybdenum disulfide (MoS2), respectively, tungsten disulfide (WS2) in the visible light range have been investigated theoretically and numerically. The MoS2 and WS2 are treated as surface conductivity with infinitesimal thickness. The results show that the absorptance can be modulated by the angle and polarization direction of the incident light, the number of layers and the thickness of the dielectric layers. Under the best selection of these factors, when only a monolayer of MoS2 or WS2 covers the surface of silicon, the absorptance can be increased to about 49.7% and 48.9%, respectively. The average value of the absorption of MoS2-based structures is greater than that of WS2 under the same parameters. The investigation would broaden the applications based on MoS2/WS2 optical properties.