Abstract

The dependence of the a‐c response of iridium oxide films upon thickness, potential, and pH was explored in sulfuric and perchloric acid solutions. For concentrations greater than 0.1M, the response function closely resembled that for an injection process diffusively spreading from one interface throughout the film. The response time shifted by a factor of 105 with the potential drop across the film. A porous film model is suggested in which response is determined by the mobility of reduced lattice sites, the diffusion coefficient being controlled by a hydrogen ion exchange current within the pores.

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