The 3.0–3.2 µm wavelength range narrow ridge waveguide Sb-based semiconductor diode lasers operating up to 333 K

Abstract

We have demonstrated Fabry–Perot single spatial mode antimonide-based type-I quantum-well ridge waveguide semiconductor diode lasers operating at 3.0–3.2 µm wavelength in continuous mode up to 333 K. Internal optical loss in narrow ridge devices was significantly reduced by using thick Si3N4 dielectric films for planarization. The fabricated lasers operate in CW mode at room temperature with output powers exceeding 5 mW and have power consumption of less than 0.2 W at the output power of 1 mW, which is the power level needed in many gas sensing applications.