Abstract
The 1.0- and 1.28-eV emission bands observed in the electroluminescence from GaAs diodes are investigated. The intensity of these bands at low voltages is proportional to exp(qV/kT). The intensity at high voltages is proportional to exp(qV/nkT), where n is an increasing function of voltage. At high current levels, the intensity as a function of diode current is sublinear (i.e., tends to saturate). Radiation damage decreases the intensity of these emission bands at a constant voltage, indicating that the 1.0- and 1.28-eV recombination is occurring outside the space-charge region. The intensity at 1.28 eV at a constant current decreases with increasing temperature as exp(ΔE/kT), where ΔE∼0.1 eV. Copper doping increases the quantum efficiency of these emission bands while decreasing the quantum efficiency of the near-edge emission band. All three emission bands are decreased by nickel doping. A donor-acceptor pair model is proposed for the 1.28-eV emission band.
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