The (1 × 1) high temperature phase of Ge(111) and Si(111)

Abstract

Monte Carlo calculations are presented of two lattice gas models which describe well the surface reconstruction of Ge(111) and Si(111), respectively, both below and above the transition. Diffuse scatterings of electrons in the high-temperature (1 × 1) phase of the models are calculated in the kinematical approximation. The origin and temperature evolution of the characteristic patterns which are observed in RHEED and LEED experiments are discussed on the basis of the calculations.