Abstract
AbstractY3Al5O12:Ce (YAG:Ce) thin films were grown from PbO‐, BaO‐, and MoO3‐based fluxes using the liquid phase epitaxy (LPE) method. Photoelectron yield, its time dependence within 0.5–10 μs shaping time, and energy resolution of these samples were measured under α‐particle excitation. For comparison a sample of the Czochralski grown bulk YAG:Ce single crystal was measured as well. Photoelectron yield values of samples grown from the BaO‐based flux were found superior to other LPE films and comparable with that of the bulk single crystal. The same is valid also for the time dependence of photoelectron yield. Obtained results are discussed taking into account the influence of the flux and technology used. Additionally, α particle energy deposition in very thin films is modelled and discussed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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