Abstract

A T-gate process using a single EB resist is described. A cutoff frequency of 200 GHz is achieved in a 0.12- mu m-gate HEMT. Delay times of sub-1/4- mu m-gate devices are quantitatively investigated by breaking down the total delay times into electron transit, channel charging, and parasitic charging times. The effective velocity of electrons is estimated to be 2.7*10/sup 7/ cm/s. >

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