Abstract
The new study of black matrix thinner for TFT-LCD was presented in this paper.Based on the normal process technology,breaking through the limits of equipments and process bottlenecks,the affection of thinner black matrix critical dimension was worked out by adding phase shift mask and back exposure.The results show that black matrix critical dimension could be reduced 1.0~1.5μm by applied on phase shift mask that decreased the diffraction of transmission edge area.Because the back exposure technology could cure the black matrix material,the black matrix critical dimension was reduced 0.3~0.5μm.By the new technology and equipment applied,the black matrix critical dimension was decreased 1.5~2.0μm at total,which meets the requirements of high quality transmit and contrast.
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