Abstract
Thin films of yttria-stabilized zirconia were deposited by plasma-enhanced chemical vapor deposition on quartz Si(100), Si(111), Ni, and the steels V2A and hastelloy at substrate temperatures (Ts): 673–873 K. The metal β-diketonates Y(thd)3 and Zr(thd)4 were used as precursors. The fully stabilized fluorite-type cubic structure was obtained over a wide range of yttria contents from 3.5 to 80 mol % (Ts=773 K). The quality of the films depended on the match of the thermal expansion coefficients of substrate and deposit.
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