Abstract

DC reactive magnetron sputtering technique has been used for the preparation of AlN thin films. The deposition temperature and the flow ratio of N2/Ar were varied and subsequent dependency of the films crystallites orientation/texture has been addressed. In general, deposited films were found hexagonal polycrystalline with a (002) preferred orientation. The X-ray diffraction (XRD) data revealed that the film crystallinity improves, with the increase of substrate temperature from 300°C to 500°C. The dropped in full width half maximum (FWHM) of the XRD rocking curve value further confirmed it. However, increasing substrate temperature above 500°C or reducing the nitrogen condition (from 60 to 30% in the environment) induced the growth of crystallites with (102) and (103) orientations. The rise of rocking curve FWHM for the corresponding conditions depicted that the films texture quality deteriorated. A further confirmation of the variation in film texture/orentation with the growth conditions has been obtained from the variation in FWHM values of a dominant E1 (TO) mode in the Fourier transform infrared (FTIR) spectra and the E2 (high) mode in Raman spectra. We have correlated the columnar structure in AFM surface analyses with the (002) or c-axis orientation as well. Spectroscopic ellipsometry of the samples have shown a higher refractive index at 500°C growth temperature.

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