Abstract

ABSTRACTCu films with thickness of 500nm and 5nm have been sputter deposited on amorphous SiO2 and Si3N4 substrates without and after sputter cleaning. The crystallographic texture has been characterized by x-ray diffraction techniques. Sputter cleaning of the substrates, by which the oxygen contaminants are removed from the Si3N4 substrates, leads to an increase in the {111} texture strength and sharpness of the Cu films on Si3N4. The texture is sharper in the 500nm thick Cu films than in the 5nm thick films. Roughness differences of the substrate surfaces have no obvious effect on the texture state.

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