Abstract
The microstructure and texture distribution of ultra-high purity Cu-0.1Al alloy target play a key role in the quality of the sputtering film. The Cu-0.1Al alloy sheets were processed by unidirectional (UR) and cross rolling (CR), and X-ray diffraction (XRD), and electron backscatter diffraction (EBSD) technologies were adopted to observe the texture and microstructure evolution. XRD results reveal that the texture types vary greatly in UR and CR due to the change of strain path. As the strain increases to 90%, S texture occupies the most, followed by copper texture in the UR sample, while brass texture dominates the most in the CR sample. Additionally, the orientation density of texture does not increase significantly with the increase of strain but shows a downward trend both in UR and CR modes. EBSD analysis demonstrates that compared with UR, the deformation microstructure in CR is more uniform, and the layer spacing between the deformation bands is smaller, which can reduce the local-region stress concentration. After the completion of recrystallization, the difference in average grain size between the UR and CR-annealed samples is not significant, and the recrystallized grains become much finer with the increase of strain, while more equiaxed grains can be observed in CR-annealed samples.
Highlights
IntroductionCopper (Cu) instead of aluminum (Al) shows more promising potentials to be metallization materials in the integrated circuit industry because of its advantages of nano-size wiring width [1]
Among numerous factors changing the quality of the thin film, the sputtering target with features of high purity, grain refinement, random orientations, and large scale should be considered primarily due to the following reasons: (i) Only Cu and Cu alloy targets with purities of 6 N or above can well ensure the uniformity of sputtering film and the fine wiring quality [5]; (ii) the finer the grain is, the faster the sputtering rate is, while the more homogeneous grain size has more uniform deposition rate and sputtering film [6,7]; (iii) for face-centered cubic (FCC) metals, the sputtering rate is
The rolled samples were annealed at 300 ◦ C for 60 min to observe the fully recrystallized The texture and microstructure
Summary
Copper (Cu) instead of aluminum (Al) shows more promising potentials to be metallization materials in the integrated circuit industry because of its advantages of nano-size wiring width [1]. Cu, as an excellent interconnect material, can reduce delays and improve computing efficiency, and ensure the reliability of integrated circuits [4]. Among numerous factors changing the quality of the thin film, the sputtering target with features of high purity, grain refinement, random orientations, and large scale should be considered primarily due to the following reasons: (i) Only Cu and Cu alloy targets with purities of 6 N or above can well ensure the uniformity of sputtering film and the fine wiring quality [5]; (ii) the finer the grain is, the faster the sputtering rate is, while the more homogeneous grain size has more uniform deposition rate and sputtering film [6,7]; (iii) for face-centered cubic (FCC) metals, the sputtering rate is
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