Abstract
This paper describes the effect of tetramethylsilane (TMS) on diamond nucleation on Si substrate under an applied bias voltage of 120 V, performed in a modified microwave plasma chemical vapor deposition (MPCVD) reactor. The introduction of TMS in the CH4/H2 plasma leads to a significant enhancement of nucleation density of diamond nuclei, namely from (3.7 ± 0.2) × 107/cm2 without the introduction of TMS to (4.7 ± 0.5) × 1010/cm2 at the TMS flow rate of 4 sccm. On the contrary, further increasing in the TMS flow rate to 8 sccm slightly reduces the nucleation density of diamond nuclei to (2.1 ± 0.3) × 1010/cm2, along with the increase in average size of diamond nuclei. High-resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy (XPS) allow us to study the microstructural and chemical composition evolution of Si/diamond interface. The obtained results suggest that bias-enhanced nucleation of diamond on Si substrate exhibits a direct relationship with the TMS flow rate.
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