Abstract
AbstractHigh quality single crystals of bis‐(8‐hydroxyquinoline) zinc (ZnQ2), a π‐conjugated molecular semiconductor with high thermal stability, good electron transport ability and excellent electroluminescence properties, were prepared by physical vapor deposition (PVD) method in a double zone tube furnace. X‐ray single crystal diffraction (XSCD) indicates that the sample was ZnO2 tetramer, (ZnQ2)4, with the triclinic unit cell parameters: a = 10.8537(15) Å, b = 11.8814(16) Å, c = 13.0532(18) Å, α = 74.119(2)°, β = 73.449(2)°, γ = 70.999(2)°, volume = 1494.9(4) Å3 and Z = 1. The crystallization mechanism analysis suggests a classical crystal growth process at low temperatures (300 and 320 °C) and an existence of non‐classical particle‐attachment crystal growth pathway at high temperature (340 °C). The (ZnQ2)4 crystals also show enhanced photoluminescence (PL) intensities and narrower full width at half maximum (FWHM) compared with that of the ZnQ2 thin film.
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