Abstract
Tetrahydropyranyl (TH) protected poly(p-hydroxystyrene) (PHS) was synthesized and its acid-catalysed thermal deprotection utilized in the design of an alkali developable, positive photoresist system incorporating chemical amplification. The solubility of THP-PHS films mixed with the appropriate onium salt photo acid generators in alkaline developers increases upon exposure to deep u.v. radiation and subsequent heating. A resist composed of THP-PHS and bis(tert-butylphenyl)iodonium triflate resolves 0.35 μm line-and-space patterns using a KrF excimer laser (248 nm) stepper (20 mJ cm−2).
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