Abstract
The paper presents the characterization of a Hamamatsu S13360–1350CS silicon photomultiplier (50 μm cell pitch, 1.3 × 1.3 mm2 total area) in single photon counting regime, in view of possible applications in next generation ring imaging Cherenkov detectors. Dark count rate and time resolution were measured as a function of bias voltage and temperature. Crosstalk, afterpulse and photon detection efficiency were characterized. The device, cooled below −10°C and operated at a moderate ~2 V overvoltage, offers excellent single photon counting performance with a time resolution of about 130 ps RMS.
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