Abstract
AbstractA buried (001) low angle twist boundary (misorientation angle 0.48°) in silicon is investigated by the technique of two‐beam transmission electron microscopy using bright‐field images obtained from diffracting vectors g{400}, g{311} and g{220}, and g{nnn} with n = 3 and 4. To analyse its elastic field, the concept of interfacial “relaxation centres” is assumed, for which the relative displacement field of the two crystals is zero. These centres are located in the middle of each square formed by a dislocation unit cell. This assumption is tested positively for the first time for a double periodic network of screw dislocations. For the image contrast calculations, the elastic field of the network is that of two perpendicular families of screw misfit dislocations in the sense of Bonnet (1981). Since the two‐beam bright‐field approximation is weak to explain the experimental images taken with g{nnn} and n = 3 and 4, extra N beam image calculations involving N < 7 systematic reflections along g{nnn} have been carried out with a devoted programme. All the computed images prove to be in good agreement with the experimental images, still validating the adopted elastic field. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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