Abstract
Silicon (Si) membranes were prepared using high precision advance nanomachining technology utilizing single point diamond turning (SPDT). We showed that SPDT allowed to produce membranes with a surface undulation down to 500 nm over diameter of 7800 μm which corresponds to a high accuracy of the surface profile. We used X-ray digital radiography based on absorption contrast for a non-destructive measurement of the thickness distribution within a thin Si crystal membrane. The semi-insulating Gallium Arsenide (SI GaAs) pixel detector bump-bonded to the Timepix readout chip was used as a highly efficient single photon counting X-ray imaging detector. Comparison of thickness values obtained by the SI GaAs Timepix detector with values obtained with a surface stand-type micrometer gauge showed comparable results and the thickness variation within the membrane was clearly detected with a standard deviation down to 8.4 μm. The thickness resolution down to 5 μm over distances of 4–8 mm was achieved in selected areas of the sample.
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