Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment

S Lindgren,H Fox,D Ferrèrre,H Brown,D Tsionou,Y Ikegami,Y Unno,C Lacasta,P Maddock,A.A Grillo,D Robinson,K Hara,Z Li,D Puldon,V Cindro,M Mikuž,A Chilingarov,J Metcalfe,G Kramberger,J.R Carter,U Parzefall,M Miñano,R Maunu,A Greenall,C Betancourt,K Toms,A Seiden,C García,V Fadeyev,K Jakobs,B Dewilde,J Von Wilpert,D Lynn,G Casse,T Kohriki,F Martinez-Mckinney,A Clark,S Mitsui,M Wormald,L Eklund,S Terada,I Gorelov,J Kierstead,H Chen,D Schamberger,F Doherty,V O’Shea,I Mandić ,L B A H Hommels ,Hiroshi Hatano ,Z Doležal ,S C Seidel ,J Böhm ,E Paganis ,Naotaka Hamasaki ,H F-W Sadrozinski ,Richard French ,Mark D Gerling ,Sergio González Sevilla ,A Affolder ,Noel Dawson ,M Mikeštíková ,C Garćıa ,R L Mccarthy ,R L Bates ,P P Allport ,P Kodyš ,Michael H Köhler ,M R Hoeferkamp ,C M Buttar ,John Wright ,Sourena Sattari ,Michio Yamada

doi:10.1016/j.nima.2010.04.094

Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment

S Lindgren, H Fox + Show 71 more

https://doi.org/10.1016/j.nima.2010.04.094

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Journal: Nuclear Inst. and Methods in Physics Research, A	Publication Date: Jun 4, 2010
Citations: 29

Affiliation: University of California, Santa Cruz, University of Glasgow, University of Liverpool, University of Geneva, Lancaster University, Jožef Stefan Institute, University of Ljubljana, Czech Academy of Sciences, Czech Academy of Sciences, Institute of Physics, University of Cambridge, Stony Brook University, Brookhaven National Laboratory, Charles University

#Interstrip Capacitance #Interstrip Resistance + Show 8 more

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Abstract

We are developing n +-in-p, p-bulk and n-readout, microstrip sensors as a non-inverting radiation hard silicon detector for the ATLAS Tracker Upgrade at the super LHC experiment. The surface radiation damages of the sensors fabricated by Hamamatsu Photonics are characterized on the interstrip capacitance, interstrip resistance and punch-through protection evolution. The detector should provide acceptable strip isolation, exceeding the input impedance of the signal readout chip ∼1 kΩ, after the integrated luminosity of 6 ab −1, which is twice the luminosity goal.

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