Abstract
This document shows the experimental results of a head-to-head Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) versus Silicon Superjunction SJ MOSFET comparison used in ac-dc high power factor converters. Three variable-frequency converters have been considered: Transition Mode Power Factor Corrector boost, Quasi resonant High-Power Factor flyback, Quasi resonant high-power factor buck-boost. To fully assess the benefits of GaN HEMT, a controller with no frequency limitation function has been used.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
