Abstract
In the context of the studies of the ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate the effects of substrate resistivity on CMOS sensor performance, the H35DEMO demonstrator, containing different diode and amplifier designs, was produced in ams H35 HV-CMOS technology using four different substrate resistivities spanning from 80-1000 ohm cm-1. A glueing process using a high-precision flip-chip machine was developed in order to capacitively couple the sensors to FE-I4 Readout ASIC using a thin layer of epoxy glue with good uniformity over a large surface. The resulting assemblies were measured in beam test at the Fermilab Test Beam Facilities with 120 GeV protons and CERN SPS H8 beamline using 180 GeV pions. The in-time efficiency and tracking properties measured for the different sensor types are shown to be compatible with the ATLAS ITk requirements for its pixel sensors.
Highlights
Ansermet 1211 Genève 4, Switzerland bAlbert Einstein Center for Fundamental Physics and Laboratory for High Energy Physics, University of Bern, Siedlerstrasse 5, CH-3012 Bern, Switzerland cDepartment of Physics, University of Liverpool, The Oliver Lodge Laboratory, Liverpool L69 7ZE, UK dBrookhaven National Laboratory (BNL), P.O
As the charge transferred between the sensor and the read-out chip (ROC) is linearly proportional to the capacitance, the 3rd column of table 2 shows the coupling capacitance normalized with respect to the middle pixel of FE-I4 Pixel Capacitance [fF] Cross-talk [%]
The measurement demonstrated that the process we developed produces assemblies with a good parallelism, i.e. less than 100 nm difference in silicon to silicon distance over the whole assembly, and good control of the distance between the coupling pads with the passivation of each pad in contact with its respective pad on the FE-I4 ASIC
Summary
The H35DEMO demonstrator chip [7] is a large size pixel sensor chip designed and produced in the ams H35 HV-CMOS technology using three types of high-resistivity substrates: 80 Ω cm, 200 Ω cm and 1000 Ω cm. The monolithic matrices were tested before and after irradiation and demonstrated good performance of the readout circuitry required for the monolithic integration of CMOS pixel sensors in ams HVCMOS technology [9, 10]. - Extra DPTUB for High Voltage - ELT in the feedback circuitry - Without DPTUB for high voltage - ELT in the feedback circuitry - Without DPTUB for high voltage - Linear transistors in feedback. - Extra DPTUB for High Voltage - High gain - Without DPTUB for high voltage - High gain - Without DPTUB for high voltage - Low gain
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