Abstract
Surface-energy-induced secondary or tertiary recrystallization by grains with a specific surface plane can be freely governed in thin-gauged 3% Si–Fe strips by controlling the bulk content of sulfur and annealing atmosphere. During a vacuum or hydrogen annealing process, a convex profile in segregated-sulfur concentration is formed due to evaporation or desorption of segregated sulfur as a hydrogen sulfide, corresponding to a trough in magnetic induction. High magnetic induction is obtained after the annealing treatments. Final annealing under an argon atmosphere caused a saturation in segregated-sulfur concentration with annealing time. Under this extremely high segregated sulfur, grains of high index crystal plane including {111} continued to grow, resulting in low magnetic induction.
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