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Abstract
We report on an x-ray diffraction study of GaAs/GaAs1−xSbx superlattices grown by molecular-beam epitaxy on miscut GaAs (100) substrates. The fundamental reflections of the superlattice lie on a reciprocal lattice rod which is tilted with respect to the reciprocal lattice rod of the substrate. The satellite reflection, in turn, lies on lines making a constant angle with the reciprocal lattice rod containing the fundamental reflections. This result is attributed to a terraced superlattice which, in addition, is tilted with respect to the substrate. We describe a model which approximates the misfit strain imposed on the superlattice at the interfacial step, and which is capable of relating the average tilt angle to the misfit strain. The same model can also explain the transverse broadenings observed for the superlattice peaks.
Published Version
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