Ternary Ta2 PdS6 Atomic Layers for an Ultrahigh Broadband Photoresponsive Phototransistor.

Abstract

2D noble-transition-metal chalcogenides (NTMCs) are emerging as a promising class of optoelectronic materials due to ultrahigh air stability, large bandgap tunability, and high photoresponse. Here, a new set of 2D NTMC: Ta2 PdS6 atomic layers is developed, displaying the excellent comprehensive optoelectronic performance with an ultrahigh photoresponsivity of 1.42× 106 A W-1 , detectivity of 7.1× 1010 Jones and a high photoconductive gain of 2.7× 106 under laser illumination at a wavelength of 633nm with a power of 0.025 W m-2 , which is ascribed to a photogating effect via study of the device band profiles. Especially, few-layer Ta2 PdS6 exhibits a good broadband photoresponse, ranging from 450nm in the ultraviolet region to 1450nm in the shortwave infrared (SIR) region. Moreover, this material also delivers an impressive electronic performance with electron mobility of ≈25 cm2 V-1 s-1 , Ion /Ioff ratio of 106 , and a one-year air stability, which is better than those of most reported 2D materials. Ourstudies underscore Ta2 PdS6 as a promising 2D material for nano-electronic and nano-optoelectronic applications.