Abstract
III-V nanowires demonstrate controlled dimensions, high aspect ratio, high carrier mobility and light trapping ability, making them promising blocks for next generation electronic and photonic devices. GaAsP nanowire has been widely investigated for light-emitting diodes, solar cells due to its tunable bandgap. However, it is a very immature field and significant growth development need to be made for optimising their properties and further for a range of applications. In this paper, self-catalyzed GaAsP nanowires were grown on Si substrate without introducing contamination from metallic nanoparticles. Surface passivation technology was applied on nanowires to boosts their optical performance.
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