Abstract
Copper indium disulfide semiconductor layers are deposited onto glass substrates or fluorine-doped tin oxide-coated glass substrates with the reactive sulfurization and the sputtering of Cu–In metal precursors. X-ray diffraction patterns and energy dispersive analysis of X-ray results reveal that the samples change from the Cu-rich tetragonal CuInS2 to the In-rich CuInS2 phase with an increase in the [In]/[In+Cu] molar ratio in the metal precursors. The thicknesses and direct band gaps of the samples, determined from surface profile measurements and transmittance and reflectance spectra, are in the ranges of 0.82–1.29μm and 1.39–1.53eV, respectively. The carrier density and mobility of samples are in the ranges of 3.29×1014–1.9×1020cm−3 and 0.58–17.41cm2/Vs, respectively. A sample with an [In]/[In+Cu] molar ratio of 0.53 has a maximum photo enhancement current density of 5.81mA/cm2 at an applied bias of 0.4V vs. an Ag/AgCl electrode in aqueous Na2S (0.35M)+K2SO3 (0.25M) solution.
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