Abstract
A complete analysis of terahertz(THZ) wave generation and detection of silicon nanowire gated field effect transistor (SNFET) is presented in this paper. Based on the developed SNFET THZ device theory, the dependence of THZ detection of SNFET on bias and structure parameters are obtained and illustrated. The THZ generation condition and various unique characteristics are also demonstrated and analyzed in details. The numerical skills utilized in this paper are also described. Based on the developed numerical tool, the evolution processes of plasma wave in generation and detection mode are also presented.
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