Abstract
Recently, we experimentally demonstrated that rectangular mesa structures of intrinsic Josephson junctions(IJJ) in Bi2Sr2CaCu2O8+d (Bi2212) can be used as a compact solid-state generator of continuous, coherent and polarizedterahertz (THz) radiation. In the present work, we will exhibit tall mesas (over 600 junctions)which were fabricated using UV lithography, e-beam lithography with photoresist and e-beamlithography with a Ti selective etching technique. We will present measurements of thec-axis resistance as a function of temperature and of current–voltagecharacteristics of THz emitting mesas with lateral sizes ranging from30 × 300 to100 × 300 µm2. Furthermore, we will discuss the dependence of the characteristics of the mesa structureson the oxygen doping level of the Bi2212 crystals. We will also experimentally show thatthe voltage–frequency relation of the ac Josephson effect has to match the cavity resonancefor successful emission.
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