Terahertz time-domain-spectroscopy system using a 1 micron wavelength laser and photoconductive components made from low-temperature-grown GaAs

Abstract

A terahertz time-domain spectroscopy (TDS) system based on a femtosecond Yb:KGW laser, photoconductive emitters and detectors made from as-grown and from annealed at moderate temperatures (~400°C) low-temperature-grown GaAs (LTG GaAs) layers was demonstrated. The measured photoconductivity of these layers increased linearly with the optical power, showing that transitions from the defect band to the conduction band are dominant. The largest amplitude THz pulse with a useful signal bandwidth reaching 3 THz and its signal-to-noise ratio exceeding 50 dB was emitted by the device made from the LTG GaAs layer annealed at 420°C temperature. The detector made from this material was by an order of magnitude less sensitive than conventional GaBiAs detectors.