Abstract
Ultrafast carrier dynamics and terahertz radiation from Er,O-codoped GaAs (GaAs:Er,O) have been investigated by pump and probe reflectance and time-domain terahertz spectroscopy. In pump and probe reflectance measurements, GaAs:Er,O showed faster relaxation time (0.37–0.56ps) of photoexcited carriers than undoped GaAs. In terahertz spectroscopy, the radiated terahertz amplitude decreased and the decay time of transient photocurrent became long with increasing Er concentration. The Er concentration dependence was understood by additional electron scattering due to the Er doping. The fast relaxation time and the terahertz radiation properties suggest new applications of GaAs:Er,O for the terahertz frequency region.
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