Abstract
We demonstrated that modulated infrared radiation can cause the resonant excitation of plasma oscillations in quantum well diode and transistor structures with high electron mobility. This effect provides a new mechanism for the generation of tunable terahertz radiation using photomixing of infrared signals. We developed a device model for a quantum well photomixer and calculated its high-frequency performance. It was shown that the proposed device can significantly surpass photomixers utilizing standard quantum well infrared photodetectors.
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