Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates

Abstract

The energy spectra of the mercury vacancy, the most common acceptor in HgCdTe material, is studied via numerical calculations and low temperature photoconductivity (PC) measurements of ‘vacancy-doped’ HgCdTe films with low cadmium content. Since the Hg vacancy is known to be a double acceptor, the model for the helium atom was adopted for degerate valence band of zinc blende semiconductors to classify the observed PC bands. This approach provides a fairly good description of the photoionization of both neutral and singly-ionized vacancy when the central cell potential is taken into account.