Abstract
We present the design and fabrication of terahertz (THz) metamaterial (MM) absorbers and their monolithic integration into a commercial CMOS technology along with its respective readout electronics to produce a low-cost, uncooled, and high resolution THz camera. We first describe the work done on single band and broadband MM absorbers on custom substrates, then progress with a description of the integration of such resonators into a six metal layer 180 nm CMOS process and its coupling with two types of microbolometer sensors: Vanadium oxide (VOx) and silicon (Si) pn diode. Additionally, we demonstrate the integration of the THz sensors with readout electronics to form a monolithic THz focal plane array (FPA). Reflection images of a metallic object hidden in a manila envelope are recorded using both the VOx and Si pn diode detectors, demonstrating the suitability of the technology for stand-off detection of concealed objects. Finally, we present the current work toward scaling this technology into a 64 × 64 FPA.
Highlights
T ERAHERTZ imaging has become a significant area of research owing to its unique characteristics
MMs are usually composed of metallic electric ring resonators (ERRs) or split ring resonators (SRRs) and are able to absorb at any EM wave ranging from the microwave to visible wavelengths [19]
Previous research demonstrated that the frequency absorption peak of a cross-shaped resonator depends on the width and length of the ERR and the refractive index of the insulator, while the absorption magnitude is determined by the loss and thickness of the insulating layer
Summary
T ERAHERTZ imaging has become a significant area of research owing to its unique characteristics. On account of its low photon energy, it is non-ionizing and safe to biological tissue, in contrast to x-rays Many materials, such as explosives and illicit drugs, have characteristic THz spectroscopic signatures that can be readily identified [1], [2]. In this paper we present work on the development of high resolution, fully integrated, MM based THz FPAs. Section II presents the design of single band and broadband THz MM absorbers and their absorption characteristics. The last section details the steps taken to scale this technology into a high resolution system: a 64 × 64 FPA
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