Terahertz integrated device: high-Q silicon dielectric resonators

Abstract

We design, fabricate, and characterize the terahertz integrated resonators on the silicon platform. Based on mode analysis and selection, the high-Q feature of resonators made of low-loss high-resistivity Si material is achieved due to the excitation of the whispering gallery mode on waveguide-coupled single-mode racetrack rings and disk cavities. The experimental results demonstrate that the Q-factor can reach up to 2839 at 218.345 GHz, which is significantly improved compared with conventional THz cavities. These high Q-factor integrated resonators can be used as on-chip terahertz ultrasensitive sensors and as terahertz functional integrated circuits.