Abstract
We present the results of terahertz generation studies under excitation via femtosecond lasers pulses epitaxial films of InAs, which were synthesized on semi-insulating and highly doped GaAs substrates. It is shown that a terahertz emitter based on epitaxial InAs film grown on a heavily doped GaAs n-type substrate, has the same terahertz generation efficiency as the InAs-film emitter grown on a semi-isolating GaAs substrate, but it has a significantly better spectral resolution, which is mainly determined by the parameters of the optical delay line and the femtosecond laser's stability. Keywords: coherent terahertz emitter, InAs epitaxial film, molecular beam epitaxy
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
