Terahertz Generation by Optical Rectification of 780 nm Laser Pulses in Pure and Sc-Doped ZnGeP2 Crystals

Abstract

Terahertz wave generation through the optical rectification of 780 nm femtosecond laser pulses in ZnGeP2 crystals has been studied. All of the possible interactions of types I and II were analyzed by modeling and experimentally. We demonstrate the possibility of broadband “low-frequency” terahertz generation by an ee–e interaction (with two pumping waves and a generated terahertz wave; all of these had extraordinary polarization in the crystal) and “high-frequency” terahertz generation by an oe–e interaction. The arising possibility of achieving the narrowing of the terahertz generation bandwidth at the oe–e interaction using thicker ZnGeP2 crystals is experimentally confirmed. It has been found that the thermal annealing of as-grown ZnGeP2 crystals and their doping with a 0.01 mass % of Sc reduces the absorption in the “anomalous absorption” region (λ = 0.62–3 μm). The terahertz generation by the oo–e interaction in (110) ZnGeP2:Sc and the as-grown ZnGeP2 crystals of equal thicknesses was compared. It has been found that ZnGeP2:Sc is more efficient for 780 nm femtosecond laser pulses optical rectification.