Abstract
We have measured the room-temperature, broad-band, terahertz response of a high-speed In0.53Ga0.47As/AlAs resonant-tunneling diode from 120 GHz to 3.9 THz using the free-electron lasers at UCSB. The ‘‘rectified’’ response is measured with a conventional probe station by using the tungsten probe tip as a whisker antenna. Normalizing the rectified response in the resonant-tunneling regime with the off-resonant response we remove the extrinsic frequency dependence controlled by the antenna and the RC time constant and measure an intrinsic relaxation time.
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