Abstract
A new approach to generate stimulated emission in the terahertz (THz) range of the electromagnetic spectrum is presented. At low temperatures, population inversion between excited states of shallow impurity centers in silicon can occur due to peculiarities of electron–phonon interaction. The terahertz stimulated emission from impurity transitions was observed from bulk monocrystalline silicon doped by group V elements (P, Bi), excited by CO 2 laser radiation.
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