Abstract
The mechanism of terahertz emission from the surfaces of n - and p-type Ge crystals illuminated by femtosecond Ti:sapphire laser pulses was investigated. It has been concluded that this emission is caused by the cold plasma oscillation activated by a transient polarization arising due to different diffusion rates for photoexcited electrons and holes. The dynamics of those carriers was also investigated with subpicosecond temporal resolution by using an optical pump–terahertz probe technique.
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