Abstract

Performance of terahertz (THz) photoconductive devices, including detectors and emitters, has been improved recently by means of plasmonic nanoantennae and gratings. However, plasmonic nanostructures introduce Ohmic losses, which limit gains in device performance. In this presentation, we discuss an alternative approach, which eliminates the problem of Ohmic losses. We use all-dielectric photoconductive metasurfaces as the active region in THz switches to improve their efficiency. In particular, we discuss two approaches to realize perfect optical absorption in a thin photoconductive layer without introducing metallic elements. In addition to providing perfect optical absorption, the photoconductive channel based on all-dielectric metasurface allows us to engineer desired electrical properties, specifically, fast and efficient conductivity switching with very high contrast. This approach thus promises a new generation of sensitive and efficient THz photoconductive detectors. Here we demonstrate and discuss performance of two practical THz photoconductive detectors with integrated all-dielectric metasurfaces.

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