Abstract
Under certain conditions, plasma instabilities associated with streaming motion of carriers taking place in n+nn+ diodes can lead to current oscillations. The origin of the phenomenon, known as optical phonon transit time resonance, is characterized by a frequency related to the transit time between consecutive optical phonon emissions by electrons along the active region of the diode. By means of Monte Carlo simulations, the possibility to obtaining current oscillations in GaN n+nn+ diodes is analyzed. The optimum conditions for the onset of such mechanism are investigated: applied bias, temperature, doping, and length of the active n region. Simulations show that current oscillations at frequencies in the terahertz range can be obtained at very low temperatures. Moreover, by choosing the appropriate applied voltage and length of the n region, some degree of tunability can be achieved for frequencies close to the plasma frequency of the n region of the n+nn+ diode.
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