Abstract
We performed optical-pump terahertz-probe measurements of a Mott insulatorYTiO3 and a band semiconductor Si using a laser diode (1.47 eV) and a femtosecond-pulselaser (1.55 eV). Both samples possess long energy-relaxation times (1.5 ms forYTiO3 and 15 µs for Si); therefore, it is possible to extract terahertz complex conductivities of photoinducedcarriers under equilibrium. We observed highly contrasting behaviour—Drudeconductivity in Si and localized conductivity possibly obeying the Jonscher law inYTiO3. The carrier number at the highest carrier-concentration layer inYTiO3 is estimated to be 0.015 per Ti site. Anisotropic conductivity ofYTiO3 is determined. Our study indicates that localized carriers might play an important rolein the incipient formation of photoinduced metallic phases in Mott insulators.In addition, this study shows that the transfer-matrix method is effective forextracting an optical constant of a sample with a spatially inhomogeneous carrierdistribution.
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