Terahertz bolometric detection by thermal noise in graphene field effect transistor

Abstract

Monolayer (MLG) and bilayer (BLG) graphene devices have been fabricated with integrated antennas and have been investigated for a wideband terahertz (THz) detection at room temperature (RT). The devices show opposite (metallic vs. semiconducting, respectively) temperature coefficients of their resistance, which enable us to achieve a reproducible THz response via bolometric heating. The bolometric nature of this response is inferred by determining the spectral density of the 1/f resistance noise exhibited by the devices, as a function of the incident THz power. With increasing power, the spectral density varies in the two devices in a manner that reflects the opposite signs of their resistance temperature coefficients. The bolometric response is furthermore confirmed for both devices by the variation of their Hooge parameter as a function of the THz power. Overall, these observations confirm the capacity of graphene devices for sensitive broadband THz detection near RT.