Tensoresistive effects in tin-doped silicon under static and dynamic pressure conditions

Abstract

Tensoresistive effects under static and dynamic pressure conditions have been studied in single crystal silicon doped with tin. For undoped silicon (KEF 15 grade), the change in the current under pressure relative to the initial value is 5–8%. For samples of n-Si 〈Sn〉, the corresponding changes amount to 25–30% under static pressure and to 55–60% under pulsed pressure conditions. The results are interpreted in terms of variation of the local internal mechanical stresses created by the impurity atoms.