Abstract
The effect of elastic flexural strain on electrical conductivity of porous silicon with different pore morphology and different properties of depletion regions around the pores is studied. Porous layers are formed using anodic electrochemical etching of the p-and n-Si wafers and have a porosity of 5–68%. It is shown that specific features of variations in electrical conductivity of porous silicon under the effect of deformation depend on the structural characteristics of the porous material. In order to explain the results obtained, various physical models of the charge-carrier transport in porous silicon are used.
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