Tensoresistance as an information source on mobility anisotropy parameter K = μ⊥/μ‖ in multivalley semiconductors and certain new possibilities of deformation metrology

Abstract

Mobility anisotropy of majority carriers in multivalley lightly doped n-Ge and n-Si single crystals is investigated by the tensoresistance method at T = 77.4 K, and values of the mobility anisotropy parameter are found under mentioned conditions: K = μ⊥/μ‖ = 15.6 in n-Ge and K = 5.89 in n-Si.