Abstract
We report the fabrication and thorough characterization of tensile strained p-type SiGe quantum well infrared photodetectors (QWIPs) grown on a Si0.74Ge0.26 pseudosubstrate. The QWIPs operate from a light-hole (LH) ground state and feature responsivity peaks in both the terahertz and mid-infrared regimes with responsivity values up to 3.7 mA/W, originating from LH–LH, LH–heavy-hole, and LH–split-off-band transitions.
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