Tensile-strained GaInAsP-InP quantum-well lasers emitting at 1.3 μm

Abstract

Tensile-strained GaInAsP-InP quantum-well (QW) lasers emitting at 1.3 /spl mu/m are investigated. Low-pressure metalorganic chemical vapor deposition (LP-MOCVD) is used for crystal growth. High-resolution X-ray diffraction shows good agreement with theoretical simulation, photoluminescence spectra have good energy separation between light-hole and heavy-hole bands due to biaxial tension. The lowest threshold current density for infinite cavity length J/sub th//N/sub w//sup /spl infin// of 100 A/cm/sup 2/ is obtained for the device with -1.15% strain and N/sub w/=3. The amount of strain which gives the lowest J/sub th//N/sub w//sup /spl infin// experimentally clarified is around -1.2%. Threshold current of a buried-heterostructure (BH) laser is reduced to be as low as 1.0 mA. Enhanced differential gain of 7.1/spl times/10/sup -16/ cm/sup 2/ is also confirmed by measurements of relative intensity noise. Much improved threshold characteristic with the feasibility of submilliamp threshold current can be achievable by optimizing the BH structure. The tensile-strained QW laser emitting at 1.3 /spl mu/m with very low power consumption is attractive for the light source of fiber in the loop system and optical interconnection applications.