Temporally resolved laser induced plasma diagnostics of single crystal silicon — Effects of ambient pressure

Abstract

Laser-Induced Breakdown Spectroscopy of silicon was performed using a nanosecond pulsed frequency doubled Nd:YAG (532 nm) laser. The temporal evolution of the laser ablation plumes in air at atmospheric pressure and at an ambient pressure of ∼ 10 − 5 mbar is presented. Electron densities were determined from the Stark broadening of the Si (I) 288.16 nm emission line. Electron densities in the range of 6.91 × 10 17 to 1.29 × 10 19 cm − 3 at atmospheric pressure and 1.68 × 10 17 to 3.02 × 10 19 cm − 3 under vacuum were observed. Electron excitation temperatures were obtained from the line to continuum ratios and yielded temperatures in the range 7600–18,200 K at atmospheric pressure, and 8020–18,200 K under vacuum. The plasma morphology is also characterized with respect to time in both pressure regimes.